Samsung has unveiled a new memory chip that it claims features the "highest capacity yet" for artificial intelligence applications.
The chip, called the HBM3E 12H, is said to be the first 12-pack HBM3E DRAM, which is a type of semiconductor memory suitable for storing large amounts of data at a relatively low cost.
“This new memory solution is part of our drive to advance HBM (bandwidth memory) core technologies and provide technology leadership for the high-capacity HBM market in the era of artificial intelligence,” said Youngcheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics.
At CES 2024, Han Jin-man, executive vice president overseeing Samsung's semiconductor business in the United States, announced that Samsung plans to significantly increase production of HBM chips.
Samsung says the HBM3E 12H delivers unprecedented bandwidth of up to 1,280 gigabytes (1.25 terabytes) per second, setting a new industry standard for 36 gigabytes.
This comes one day after rival Micron announced mass production of the high-speed 24GB 8L HBM3E, used in computers for purposes such as artificial intelligence applications and ultra-detailed graphics.
Micron says the HBM3E can transfer more than 1.2 terabytes of data every second, similar to Samsung's 1.25 terabytes per second bandwidth.
Micron currently has a modest share of the global HBM market, so the company is investing heavily in its next generation product, HBM3e, to significantly reduce this gap.
It is worth noting that Samsung and Micron, as well as SK Hynix, are included in the list of the best companies in manufacturing DRAM chips around the world, which are used in many gadgets such as smartphones and computers. It is an advanced memory technology used in semiconductor devices, especially in graphics processing units, central processing units, and other high-performance computing applications.
Advancements in semiconductor tech are accelerating rapidly.
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